Experimental Investigation of Parasitic Effects in High Electron Mobility AlGaN/GaN Heterostructure Grown on Si(111) Substrate

M. Gassoumia; I. Tomsah

View/Download PDF

Buy Reprints

PDF

Translate this page into:

Research Article

9 (

); 83-93

Experimental Investigation of Parasitic Effects in High Electron Mobility AlGaN/GaN Heterostructure Grown on Si(111) Substrate

M. Gassoumia, I. Tomsah

Received: 2020-02-26, Accepted: 2020-02-26, Published: 2016-01-01

Licence

This is an open-access article distributed under the terms of the Creative Commons Attribution-Non Commercial-Share Alike 4.0 License, which allows others to remix, transform, and build upon the work non-commercially, as long as the author is credited and the new creations are licensed under the identical terms.

Disclaimer:
This article was originally published by Qassim University and was migrated to Scientific Scholar after the change of Publisher.

Abstract

AlGaN/GaN High Electron Mobility Transistors (HEMTs) with silicon (111) substrates reveal some anomalies (parasitic) like kink effect, hysteresis phenomena and degradation in saturation current on Ids-Vds and Ids-Vgs as a function of temperature. These anomalies on output characteristics changes when we vary measurement conditions (temperature, polarisation, stress...). These parasitic effects can be attributed to the presence of deep- level on the hetero-structure.