Electrically Active Defects in 4H-SiC Schottky Barrier Diodes Characterization by DLTS System

M. Gassoumi

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Research Article

9 (

); 95-106

Electrically Active Defects in 4H-SiC Schottky Barrier Diodes Characterization by DLTS System

M. Gassoumi

Received: 2020-02-26, Accepted: 2020-02-26, Published: 2016-01-01

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This is an open-access article distributed under the terms of the Creative Commons Attribution-Non Commercial-Share Alike 4.0 License, which allows others to remix, transform, and build upon the work non-commercially, as long as the author is credited and the new creations are licensed under the identical terms.

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This article was originally published by Qassim University and was migrated to Scientific Scholar after the change of Publisher.

Abstract

Ti/Pt/Au 4H-SiC Schottky barrier diode (SBD) has been characterized by the capacitance– voltage (C–V) technique as a function of temperature (40–310 K). The barrier height (BH) was determined as 2.45eV at the temperature of 300 K and frequency of 50 kHz from C–V measurements, respectively. Deep level transient spectroscopy (DLTS) has been used to investigate deep levels in Ti/Pt/Au 4H-SiC SBD. The five electron trap centers to be present at temperatures 251, 223, 183, 127, and 98K have been realized. The origin of these defects has been decided to be intrinsic nature and it has been found the correlation between C–V and DLTS measurements quite interesting.